| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2018-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbce368a314f5dec6c9ef3f538b623da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77f3574b27bce02f545726eb7ba187dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e72cdc0ff85db1da6c6f43192e8ae5c1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67c78a3472dfaf4c325a3f77fc8453cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09b1c70d3158336bfea6be53ee4a8b4c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_322898ace294c41893dc08034f08bff7 |
| publicationDate |
2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201839847-A |
| titleOfInvention |
Plasma processing method |
| abstract |
An object of the present invention is to provide a plasma processing method for plasma etching a wafer such as a semiconductor substrate, so as to remove metal and non-metal composite deposits accumulated in a processing chamber due to wafer etching treatment, and reduce foreign matters caused by the deposits. The occurrence of the plasma treatment method. The present invention relates to a plasma processing method for plasma-etching a sample in a processing chamber and plasma cleaning the processing chamber, and is characterized by having an etching step of performing plasma etching of a specific number of the samples, and using the etching step. Plasma removal metal removal step containing a metal element-containing stacked film, non-metal removal step using a plasma which is different from the plasma of the metal removal step described above to remove a non-metal element-containing stacked film; repeat the above-mentioned metal removal twice or more Steps and the aforementioned non-metal removal step. |
| priorityDate |
2017-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |