http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201832278-A

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filingDate 2017-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2018-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201832278-A
titleOfInvention Method and apparatus for plasma cutting semiconductor wafers
abstract The invention provides a method for plasma cutting a substrate. The substrate has a top surface and a bottom surface. The top surface of the substrate has a plurality of cutting track regions and at least one device structure. The substrate is placed on a support film on a frame to form a workpiece. A processing chamber having a plasma source is provided. A workpiece support is provided in the plasma processing chamber. The workpiece is placed on the workpiece support. Plasma is generated from the plasma source in the plasma processing chamber. The workpiece is processed using the generated plasma and by-products generated from the support film when the support film is exposed to the generated plasma.
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priorityDate 2016-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 27.