| abstract |
A semiconductor processing method includes forming a first dielectric layer including an N-type dopant on a first fin, a first fin extending over a first region of the substrate, and forming a second dielectric including a P-type dopant Layered on the first fin and the second fin, the second fin extends over the second region of the substrate, the second dielectric layer is on the first dielectric layer, and the isolation layer is formed, adjacent to the first layer Between the fins and between the adjacent second fins. The method further includes performing a first implantation process with the first dopant, the etching process changing the etching rate of the isolation layer, and etching the isolation layer, the first dielectric layer and the second dielectric layer, wherein after the etching, The first fin and the second fin extend above the upper surface of the isolation layer. |