| abstract |
The present invention provides a plasma processing method capable of suppressing variations in plasma etching performance.n n n The present invention relates to a plasma processing method for performing plasma etching on a sample in which a film containing a metal element is arranged in a processing chamber. The plasma cleaning is performed in the processing chamber using a gas containing boron element. After the plasma is cleaned, The plasma is used to remove the boron element, the boron element is removed, the plasma is cleaned in the processing chamber using a gas containing fluorine, and the plasma is cleaned using the gas containing fluorine. The plasma generated by the silicon element gas deposits a deposited film in the processing chamber. After the deposited film is deposited, the sample is subjected to plasma etching. |