| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32706 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 |
| filingDate |
2017-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7bc801fd112f0b7d900e1741e803319
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82a2df81e16a643fbecf8e238aa39cf5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fdd745292ea7056fe0f8b0ce6dde8cf3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a64be52af17d74df8809ff1fd82d6f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57d9de46516075ba71d9d9f21993d752 |
| publicationDate |
2018-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201810422-A |
| titleOfInvention |
Selective etching using material denaturation and RF pulses |
| abstract |
Semiconductor systems and methods can include methods of performing selective etching, the methods including the steps of denaturation of materials on a semiconductor substrate. The semiconductor substrate can have at least two turbulent materials on the surface of the semiconductor substrate. The methods can include the steps of forming a low power plasma within a processing chamber housing the semiconductor substrate. The low power plasma can be a radio frequency ("RF") plasma, which in an embodiment can be formed, at least in part, by an RF bias power source at about 10 W and about 100 W. Working between. The RF bias supply can also pulse at a frequency of less than about 5,000 Hz. The method may further comprise the step of etching the at least one surface of the semiconductor substrate at a higher etch rate than the second material of the at least two jeweled materials on the surface of the semiconductor substrate One of the two violent materials is subject to violent material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I807210-B |
| priorityDate |
2016-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |