http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201806029-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
filingDate 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_987a21a9be4a4262767fc1486e8e2a91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_686713ff398ffc6d38cee2470068fc6e
publicationDate 2018-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201806029-A
titleOfInvention Hydrogen plasma extraction method
abstract A method for extracting silicon using hydrogen plasma has been disclosed in various embodiments. The substrate processing method includes: providing a substrate including a first material composed of silicon and a second material different from the first material; forming a plasma-excited plasma containing H 2 and optional Ar A processing gas; and exposing the substrate to the processing gas excited by plasma to selectively etch the first material relative to the second material. According to an embodiment, the second material is selected from the group consisting of SiN, SiO 2 , and combinations thereof.
priorityDate 2016-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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