http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201806029-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate | 2017-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_987a21a9be4a4262767fc1486e8e2a91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_686713ff398ffc6d38cee2470068fc6e |
publicationDate | 2018-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-201806029-A |
titleOfInvention | Hydrogen plasma extraction method |
abstract | A method for extracting silicon using hydrogen plasma has been disclosed in various embodiments. The substrate processing method includes: providing a substrate including a first material composed of silicon and a second material different from the first material; forming a plasma-excited plasma containing H 2 and optional Ar A processing gas; and exposing the substrate to the processing gas excited by plasma to selectively etch the first material relative to the second material. According to an embodiment, the second material is selected from the group consisting of SiN, SiO 2 , and combinations thereof. |
priorityDate | 2016-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.