| abstract |
The present invention provides a method for crystal growth in a recessed portion, which is for a substrate to be processed having an insulating film having a recessed portion formed on the surface, and crystals are grown in the recessed portion. The method has the following steps: The first film is formed into a thickness of the depth of the recessed portion; then, the first film is etched with an etching gas so that the first film remains only at the bottom of the recessed portion; The processing substrate is annealed so that the first film remaining in the bottom of the recessed portion becomes a crystalline layer; and then, the surface of the insulating film and the surface of the crystalline layer are not fully buried in the recessed portion. Thickness, so that the second film is formed into a film; then, the substrate to be processed is annealed, and the second film is crystal-grown from the bottom in the recess by a solid-state epitaxial growth method to form an epitaxial crystal layer; Next, the remaining second film is removed by etching with an etching gas. |