http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201739947-A

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filingDate 2017-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2017-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201739947-A
titleOfInvention Film formation method
abstract A film forming method is a film formed by a first processing gas adsorbable to a hydroxyl group and a reaction product of a second processing gas that reacts with the first processing gas, and includes: forming the first processing a step of supplying the gas to the surface of the substrate and adsorbing the first processing gas on the surface of the substrate; and supplying the second processing gas to the substrate on which the first processing gas is adsorbed, thereby allowing the first processing gas to a step of reacting the second processing gas to form the reaction product, and a step of modifying the surface of the reaction product by slurrying the plasma treatment gas and supplying the gas to the substrate; In the surface modification process, the first plasma processing gas is supplied so that the entire plasma processing direction is formed in the direction parallel to the surface of the substrate, and the second plasma processing gas containing the hydrogen-containing gas is supplied. The step of supplying the first plasma processing gas to the upstream side in the direction parallel to the surface of the substrate.
priorityDate 2016-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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