| abstract |
Disclosure of several methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer over the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; An upper interlayer dielectric (ILD), wherein the ILD includes a trench, and a bottom portion of the trench includes at least a portion of a top portion of the first metal component; a resistor disposed on a sidewall and a bottom of the trench a barrier material; and a second metal component disposed in the trench. |