| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0638
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2013-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af0b7561f3ab5032407bcd7ddd43253d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59ca49103cefb08cdea0a99ccb44955c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_059f72fa2150d5bb0a0df74db24e65ff
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea8caeee802de36aff26b80cbe4103cd |
| publicationDate |
2017-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201717396-A |
| titleOfInvention |
Isolated and bulk semiconductor device formed on the same bulk substrate (2) |
| abstract |
Isolated and bulk semiconductor devices formed on the same bulk substrate and methods for forming such devices are described. For example, a semiconductor structure includes a first semiconductor device having a first semiconductor body disposed over a bulk substrate. The first semiconductor body has an uppermost surface having a first horizontal plane. The semiconductor structure also includes a second semiconductor device having a second semiconductor body disposed over an isolation substrate. The isolation base is placed on the block substrate. The second semiconductor body has a second horizontal surface having an uppermost surface. The first and second horizontal planes are coplanar. |
| priorityDate |
2012-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |