http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201714215-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e6d67894a893256e5b4d85401e466143 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2016-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37c2845c17e0b11bda90bf193b63376e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5413a62bd6245d4d924b105e9fc3c617 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dc4a2dd8d2fd645eab63e225d0e82fd |
| publicationDate | 2017-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201714215-A |
| titleOfInvention | Single wafer instant etch rate and uniformity predictor for plasma etching processes |
| abstract | This invention relates to semiconductor fabrication, and more particularly to an instant method for authenticating the etch rate of an electrode etch process. A method for testing a semiconductor plasma etch chamber can include depositing a film on a substrate of a wafer, the wafer including a central region and an edge region; the central region of the wafer A pattern is isolated from the edge region to deposit a photoresist on top of the film; and an etch process comprising at least three process steps is performed on the wafer. The three process steps can include: etching the film in any region of the photoresist-free coverage region until a first clear endpoint signal is achieved; performing an in-situ ashing to remove any photoresist; and etching The film in any area exposed by the photoresist is removed until a second clear endpoint is reached. The method can further include determining whether both endpoints are within respective previously set tolerances, and if both endpoints are within the previously set tolerance, verifying the plasma etch chamber as verified. |
| priorityDate | 2015-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419525060 |
Total number of triples: 22.