| abstract |
The present invention discloses an apparatus and method for a radio frequency (RF) filter on a silicon-on-insulator (SOI) substrate. In some embodiments, an RF device can include a germanium die, such as a SOI die, the germanium die including a first side and a second side. The germanium die can further include a plurality of vias, wherein each via is configured to provide an electrical connection between the first side and the second side of the germanium die. The RF device can further include at least one RF flip chip mounted on the first side of the germanium die. The germanium die can include, for example, an RF circuit such as a switching circuit, and the RF flip chip can include, for example, a filter such as a surface acoustic wave (SAW) filter. |