| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-465 |
| filingDate |
2013-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e7fdb16485259bce3b43ef57a1d4c7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca78dc6711c45b55afd2391a4544809c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b4ccd24ad666c4a3d3c26f351768e7a |
| publicationDate |
2017-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201711110-A |
| titleOfInvention |
Plasma enhanced etching in an enlarged plasma processing system |
| abstract |
The present invention provides a method for etching a substrate in a plasma processing chamber having at least a first plasma generating region and a second electricity separated from the first plasma generating region by a half barrier structure The pulp production area. The method includes producing a first plasma from a primary feed gas in a first plasma generation zone. The method further includes generating a second plasma from the secondary feed gas in the second plasma generating region to cause at least some species from the second plasma to migrate into the first plasma generating region. The method can additionally include etching the substrate using the first plasma after the first plasma has been grown using the migration species from the second plasma. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I748360-B |
| priorityDate |
2012-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |