| abstract |
The present disclosure provides a semiconductor device and a method of forming the same. The method for forming a semiconductor device includes forming a first gate structure on a substrate, forming a source/drain feature in the substrate and adjacent to the first gate structure, forming a dielectric layer on the first gate structure and a source/gate Above the pole feature, a portion of the dielectric layer is removed to form a first trench exposing the first gate structure and the source/drain feature, forming the first conductive feature in the first trench, removing A first portion of the first gate structure to form a second trench and a second conductive feature in the second trench. |