| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2016-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78f36760f2f40adf04ac588c8e4eb164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4beb5ee0ed4fd17822a559ddd9c4536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d272419ee5f74602aa9664ff5b1dfa8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d40fffef591d441896759b693bf027f7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7aaa94fc712b333a3b0b705bcc6173c6 |
| publicationDate |
2017-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201709263-A |
| titleOfInvention |
System and method for isotropically etching ruthenium-free residues in tight spaces |
| abstract |
A system and method for etching a substrate includes disposing a substrate including a first structure and a dummy structure in a processing chamber. The first structure is made of a material selected from the group consisting of cerium oxide and cerium nitride. The dummy structure is made of tantalum. A carrier gas is supplied to the processing chamber. Nitrogen trifluoride and molecular hydrogen gas are supplied to the processing chamber. A plasma is produced in the processing chamber. The dummy structure is etched. |
| priorityDate |
2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |