| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2016-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b61b95325a82a3becf0e1e0b4d0c0df8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cf1ece880582fe73c6f7a6cc623e89c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06d24d08fa3d73a47df33d04cb19c9ca |
| publicationDate |
2017-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201703146-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing device, and recording medium |
| abstract |
An object of the present invention is to suppress the generation of particles when a film is formed on a substrate.nA method of manufacturing a semiconductor device according to the present invention includes the step of forming a film on a substrate by performing a cycle of the following steps at a predetermined number of times: a step of supplying a material gas to a substrate in the processing chamber via a first nozzle; a step of supplying an oxygen-containing gas to the substrate in the processing chamber by the second nozzle different from the first nozzle; and a step of supplying the hydrogen-containing gas to the substrate in the processing chamber via the second nozzle; and further including before the step of forming the film The surface of the second nozzle is etched to a depth in the range of 15 μm or more and 30 μm or less from the surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11728159-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11257669-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I643683-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I679678-B |
| priorityDate |
2015-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |