| abstract |
A method of fabricating a semiconductor comprising receiving a device having a substrate and a first layer disposed on the substrate, wherein the first layer comprises a trench. The method also includes applying a first material over the first layer and into the trench, wherein the first material comprises a filler and a pore former chemically bonded to the filler. The method further comprises curing the first material to form a layer of porous material. The porous material layer has a first portion and a second portion, the first portion being placed in the trench and the second portion being placed over the first layer. The first and second portions generally contain the same percentages of ruthenium, oxygen and carbon. The first and second portions generally contain the same porosity. |