http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201643959-A

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
filingDate 2016-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a74fc765872d2c48c507c53e08a71bae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aca2247ecfb8e4092263a692934cbc37
publicationDate 2016-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201643959-A
titleOfInvention Method for etching through-holes and germanium through-hole etching device
abstract The present invention provides a method of etching a via hole and a via via etching apparatus. A method for etching a via hole on a back surface of a germanium substrate, comprising: placing a germanium substrate in a reaction chamber of a plasma etching apparatus with a back side facing upward, and forming a germanium material layer on a back surface of the germanium substrate a hard mask layer is formed with a photoresist pattern formed thereon; the photoresist pattern is used as a mask, the hard mask layer is etched to form a hard mask pattern; and the residual photoresist pattern is removed; The hard mask pattern acts as a mask, etching the underlying germanium material layer to initially form the germanium via; removing the residual hard mask pattern; etching the germanium material layer globally; and removing the germanium substrate out of the reaction chamber.
priorityDate 2015-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 24.