| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2015-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fae16314a05fa8938c452e4c9a84d00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec5a90d1f62ee0d2512291b1ae7b9b45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7a6d6252225df134f3cafccb3b6987df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85e86b730e81f3c0bbe3971a665f677f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_632c4a89c5169223793e063afe6a4079 |
| publicationDate |
2016-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201639014-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
The technique of fabricating a fin field effect transistor (FinFET) in the present disclosure includes providing a substrate having a fin structure; and forming an isolation region having an upper surface having a first surface shape. The grain is implanted obliquely to the edge portion of the upper surface. The edge portion is then removed by an etching process. In this example, the etching process etches the edge portion of the upper surface more than the other portions of the upper surface, and adjusts the isolation region to have a second surface shape. The step height of the second surface shape is less than the step height of the first surface shape. The oblique implantation and etching processes described above may be performed after forming the gate structure, before forming the gate structure, but before recessing the fin structure, or after recessing the fin structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I675456-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10896911-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108573975-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108573975-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110649025-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110649025-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I664716-B |
| priorityDate |
2015-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |