| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2015-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea6dd6b4f72b0e220775a3075b2aad55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e99539f7df9d5a50ad4cba8381204edb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2513f0facd4ff1646f2ce8aebabc7b40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae628f082c6d8e4e5627304caf25783b |
| publicationDate |
2016-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201635347-A |
| titleOfInvention |
Resolve FCVD line bending by deposition adjustment |
| abstract |
A method of reducing surface roughness and line bending of a pillared substrate includes treating the substrate containing the pillars with free radicals to form a treated surface. The free radical can be a thiol group, a nitrogen group or an oxy group. The method includes reacting an organic hafnium precursor with an oxygen precursor to form a dielectric film over the treated surface. The method includes curing the dielectric film at a temperature of about 150 ° C or below. A method of reducing surface roughness and line bending of a substrate having a pillar includes reacting an organic tantalum precursor, an oxygen precursor, and a radical precursor to form a dielectric film on the substrate including the pillar. The method includes curing the dielectric film at a temperature of about 150 ° C or below. The free radical precursor may be selected from the group consisting of a nitrogen radical precursor, an oxy radical precursor, and a sulfhydryl radical precursor. |
| priorityDate |
2014-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |