| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05G2-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32972
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05G2-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2015-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b29e5429a4f08e4648420425dd9be9e7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff7a9827027deae680d3a0a47bd8f300 |
| publicationDate |
2016-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201633852-A |
| titleOfInvention |
Vacuum ultraviolet radiation adjustment through plasma for collision energy transfer of energy absorber gas |
| abstract |
What is disclosed herein is a method of adjusting the ultraviolet radiation (VUV) radiation from a plasma in a semiconductor processing chamber. The methods can include generating a plasma containing a VUV emitter gas and a collision energy absorber gas in the processing chamber, and adjusting the concentration ratio of the VUV emitter gas to the collision energy absorber gas in the plasma. The radiation of the VUV radiation of the plasma. In some embodiments, the VUV emitter gas can be helium and the collision energy absorber gas can be helium, while in some such embodiments, adjusting the VUV radiation can include flowing helium and/or helium in a ratio to In the processing chamber, the concentration ratio of bismuth to bismuth in the plasma is changed. Further, the disclosure of the present specification is an apparatus for carrying out the aforementioned methods. |
| priorityDate |
2014-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |