| abstract |
The semiconductor device according to the embodiment includes a laminate (20) including a plurality of semiconductor wafers (11a to 11h), and at least a part of the plurality of semiconductor wafers has an electrode (12) penetrating the semiconductor wafer, and the plurality of semiconductor wafers The first layer (W1) is laminated and connected to each other via an electrode; the ruthenium substrate (30) is provided on the first surface of the laminate, and has a second width (W2) larger than the first width; The layer (50) is provided on the second surface of the laminate; and the resin (42, 45) is provided around the laminate. |