| abstract |
Described herein are compositions for forming a ruthenium containing film such as, but not limited to, a carbon-doped yttrium oxide film, a carbon-doped tantalum nitride, a carbon-doped yttrium oxynitride film, and a method thereof. In one aspect, the composition comprises at least a cyclic carbosilane having at least one Si-C-Si linkage and at least one anchoring group selected from a halogen atom. , amine groups and combinations thereof. |