| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73aeddf6b80f70ea84bb645d4f4edf75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01015 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2012-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee5b70d4661f26f3500ea14a725f6824
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd0e38d838791531e0b226cee997177d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_498e063179823eee47860e3dbe5efdf6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4ec88c7c4d98bdc2bf24b84bb50ef28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ddd8f40641c2774d53d8b7fe05cfe03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1ba5eb8c6c0a9c848acdb81e52ec9b8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2b9b0efe9705ce5d65cdf26438ee041 |
| publicationDate |
2016-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201627520-A |
| titleOfInvention |
Method for depositing doped yttrium oxide and atomic layer deposition process for depositing doped yttrium oxide onto a substrate |
| abstract |
The present invention relates to a method of depositing doped cerium oxide on a substrate in a reaction chamber by an atomic layer deposition process. The atomic layer deposition process includes at least one doping of the yttrium oxide deposition cycle, wherein the step of doping the yttrium oxide deposition cycle is as follows. The substrate is contacted with a ruthenium precursor. The substrate is contacted with a dopant precursor. Excess ruthenium precursor and dopant precursor are removed from the substrate. The substrate is then contacted with a reactive species to form a doped cerium oxide. |
| priorityDate |
2011-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |