| abstract |
The present invention provides a method of forming a tantalum nitride film at a low temperature by an atomic layer deposition (ALD) method, and an atomic layer deposition apparatus therefor. The method for forming a thin film of a tantalum nitride film comprises: using a ruthenium-containing precursor material as a source gas; using plasma-activated nitrogen as a reaction gas; using nitrogen as a purge gas, and according to the source gas, the purge gas, The reaction gas and the purge gas are sequentially supplied to form the tantalum nitride film (Si3N4). |