| abstract |
Methods for the deposition and conditioning of substoichiometric titanium oxide are provided herein. The method involves depositing high purity and highly conformal titanium on a substrate in a chamber by (i) exposing the substrate to titanium tetraiodide, (ii) removing the chamber, (iii) The substrate is exposed to the plasma, (iv) removes the chamber, (v) repeats (i) to (iv), and treats the titanium deposited on the substrate to form substoichiometric titanium oxide. It is also possible to deposit titanium oxide before depositing titanium on the substrate. Such treatments include exposing the substrate to an oxygen source and/or tempering the substrate. |