abstract |
The present invention improves the reliability of a semiconductor device. In a method of fabricating a semiconductor device according to an embodiment of the present invention, when a photoresist pattern is formed on a cover insulating film made of a tantalum nitride film, the photoresist pattern is coated with a chemically amplified photoresist S34, and exposed. The step of S36 and development processing S38 is formed. Then, the chemically amplified photoresist is applied on the surface of the cover insulating film composed of the tantalum nitride film in a direct contact manner, and the coating composed of the tantalum nitride film is applied before the chemically amplified photoresist coating. The surface of the insulating film is subjected to an organic acid pretreatment S32. |