| abstract |
Methods and apparatus for making porous, low-k dielectric films are described. In some embodiments, the method comprises exposing the precursor film to a plasma generated from a weak oxidant, the precursor film comprising a pore former within the matrix. The plasma can also contain a reducing agent species. In some embodiments, the plasma is a downstream plasma. Embodiments of the method include selectively removing regions of the isolated organic pore former coexisting in the rhodium-organic matrix by exposure to a plasma while conserving organic groups bonded to the backbone of the rhodium matrix. This method also results in low damage to the dielectric film. In some embodiments, the plasma exposure is followed by ultraviolet (UV) radiation exposure. |