| abstract |
According to the present invention, there can be provided a cleaning liquid comprising a semiconductor having (1) a material containing cobalt or a cobalt alloy, or (2) a material containing cobalt or cobalt alloy and tungsten, and a low dielectric constant film (Low-k film). The dry etching residue on the surface of the device is removed; 0.001 to 7% by mass of the alkali metal compound, 0.005 to 35% by mass of the peroxide, 0.005 to 10% by mass of the corrosion inhibitor, 0.000001 to 1% by mass of the alkaline earth metal compound, and water. |