| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate |
2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c87a654bcbfbbbfc4ac5b550953e79e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11276cd7b630770ff1eab498eaf58569 |
| publicationDate |
2016-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201602389-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing device, and recording medium |
| abstract |
An object of the present invention is to form a film having a high carbon concentration.nThe solution of the present invention is to form a film containing a first element, a second element, and carbon on a substrate by performing a predetermined number of cycles in which the following steps are not performed simultaneously:nThe substrate is thermally decomposed with a raw material having a chemical bond of a first element and carbon, and is kept under the condition that at least a part of the chemical bond between the first element and the carbon contained in the raw material is not cut, thereby forming a material exceeding a step of forming a first solid layer having a thickness of 1 atomic layer or less and containing a chemical bond of a first element and carbon; and supplying a plasma-containing reactant containing a second element to the substrate, or supplying a plasma The step of modifying the first solid layer to form the second solid layer by exciting the inert gas and the reactant containing the second element which is not excited by the plasma. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I756612-B |
| priorityDate |
2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |