| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32724 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2015-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c043a36a196240cc7f375b8def7d96d0 |
| publicationDate |
2016-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201601208-A |
| titleOfInvention |
Cooling pedestal for thermal management of cutting tape during plasma cutting |
| abstract |
The present invention describes a method and apparatus for dicing semiconductor wafers having a plurality of integrated circuits on each wafer. In one example, the plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber. The plasma etch chamber also includes a cathode assembly disposed below the plasma source. The cathode assembly includes a cooled RF power supply chuck for supporting an inner portion of the back side of the substrate carrier. The cathode assembly also includes a cooled RF isolation support that surrounds but is isolated from the RF power supply chuck. The RF isolation support is used to support the outer side portion of the back side of the substrate carrier. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11342163-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I736584-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I713757-B |
| priorityDate |
2014-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |