| abstract |
Methods and apparatus for improved flowable dielectric deposition of a substrate surface are provided herein. This method involves improving the nucleation and wetting of the substrate surface without forming a thick, high wetting etch rate interface layer. According to various embodiments, the method can include single or multi-stage distal plasma processing of the deposition surface. In certain embodiments, the treatment can include exposure to both the reducing chemical and the hydroxide containing chemical. Equipment for carrying out the method is also provided. |