| abstract |
SUMMARY OF THE INVENTION The present invention is directed to a plasma processing method that etches regions of different densities at equal etch rates. In the case of surface wave plasma etching, the materials of each layer contain Si and N, and the processing gas thereof contains a hydrofluorocarbon gas, a rare gas, and oxygen, and a high-frequency bias potential is applied to a predetermined portion of the substrate side. The high-frequency bias potential is generated, and the electric power per unit area applied to the substrate is 0 W/m 2 or more and 400 W/m 2 or less. |