http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201510267-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate | 2014-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2c0b66ca2945da1c70d561af24d0686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0680cbd6529ed20f88e1984ec07accca |
| publicationDate | 2015-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201510267-A |
| titleOfInvention | Tungsten deposition with hexafluoride (WF6) etch back |
| abstract | The implementations described herein are generally directed to methods of forming a tungsten material on a substrate using a vapor deposition process. The method comprises the steps of: positioning a substrate having features formed therein in a substrate processing chamber; depositing a first tungsten over the feature by introducing a continuous stream of hydrogen-containing gas and a tungsten halogen compound into the processing chamber Membrane to deposit a first film of the entire tungsten layer; using a plasma treatment to etch the first film of the entire tungsten layer to remove the first film by exposing the first film to a continuous flow of the tungsten halogen compound and the activation process gas a portion of a film; and depositing a second film of the monolithic tungsten layer by introducing a continuous stream of hydrogen-containing gas and a tungsten-halogen compound into the processing chamber to deposit a second tungsten film over the first tungsten film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I769316-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I737601-B |
| priorityDate | 2013-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 46.