http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201507026-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-305 |
| filingDate | 2014-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_df5fc162e42103f617ecf315cc152dc1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd5301972a26277fa495f69c6e0c070e |
| publicationDate | 2015-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201507026-A |
| titleOfInvention | Plasma etching device and plasma etching method |
| abstract | The present invention provides a plasma etching apparatus and a plasma etching method for simply selecting a flow ratio for use in obtaining desired etching characteristics. The plasma etching apparatus has a processing container, a holding portion that is disposed in the processing container to hold the substrate, and an electrode plate that is disposed in the processing container and faces the holding portion. Further, the plasma etching apparatus has a plurality of supply portions for supplying a processing gas to a space surrounded by the holding portion and the electrode plate, and is divided into n in a radial direction of the substrate (n is a natural number of 2 or more) Each of the regions is disposed separately, and the processing gas is supplied from the gas supply holes formed at equal intervals in the respective regions. Further, the plasma etching apparatus has a high-frequency power source, and the high-frequency electric power is supplied to at least one of the holding portion and the electrode plate, and the processing gas supplied from the plurality of supply portions to the space is plasma-plasmaized. Further, the plasma etching apparatus controls the flow rate of the gas supplied from the respective gas supply holes of the area. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I661462-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113451168-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-168094-U1 |
| priorityDate | 2013-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14796 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520344 |
Total number of triples: 25.