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filingDate 2014-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c3f1ba247ae0855045a6f81e40d10cde
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publicationDate 2014-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201447017-A
titleOfInvention Method for forming ruthenium oxide film and device for forming ruthenium oxide film
abstract The method for forming a tantalum oxide film according to the present invention is to perform a combination of the following steps: a standby step of accommodating/recycling the object to be processed into the wafer boat; and a loading step of processing the contained in the wafer boat The body is housed in the reaction chamber; the ruthenium oxide film forming step is formed by forming a ruthenium oxide film on the object to be processed contained in the reaction chamber; and an unloading step of transporting the object to be processed having the ruthenium oxide film to the reaction outdoor. In at least one of the unloading step, the standby step, and the loading step, the reaction chamber is heated, and a gas containing water vapor is supplied into the reaction chamber.
priorityDate 2013-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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