http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201440141-A

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publicationDate 2014-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201440141-A
titleOfInvention UV-assisted reactive ion etching for copper
abstract In some embodiments, a plasma etching apparatus for etching copper is provided, the plasma etching apparatus comprising (1) a plasma body having a processing chamber, the processing chamber being adapted to receive a substrate; and (2) coupling a radio frequency (RF) source to the RF electrode; (3) a susceptor located in the process chamber and adapted to support the substrate; and (4) being disposed during at least a portion of the etch process performed within the plasma etch device Ultraviolet light to the UV source of the process chamber. Many other aspects are also provided.
priorityDate 2013-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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