http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201438103-A

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publicationDate 2014-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201438103-A
titleOfInvention Semiconductor processing system having multiple plasma configuration members
abstract An exemplary system can include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system can include a first distal plasma unit coupled to the first inlet of the chamber and configured to transfer the first precursor into the chamber via the first inlet. The system can still further include a second distal plasma unit coupled to the second inlet of the chamber and configured to transfer the second precursor to the chamber via the second inlet . The first inlet and the second inlet may be fluidly coupled to the mixing region of the chamber, the mixing region being fluidly coupled to the processing region of the chamber and to the processing region. The mixing zone can be configured to allow the first precursor and the second precursor to interact with each other outside of the processing region of the chamber.
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