| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d380ea394238f732e0ab98fa00bad429 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 |
| classificationCPCInventive |
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823475
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7808
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate |
2014-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cbe234b4a95c1300413772883a9cd5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f392f3e0295c3d34e17d839fd2c485e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f85a6ee0203c8909b49ad05ac5f8d3b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd1f0705f7204592f0bbca7297ff3a80
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23d3f172ba0bd8cf2c022eea66a9c793
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1c4c8fa48dcc624c66ca6ca80f0be75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89172ca793ef1d84c60433c6e560ebcc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_675329a3c11b09fcc277230b575e054c |
| publicationDate |
2014-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201436239-A |
| titleOfInvention |
Termination trench for power MOSFET applications and method of making same |
| abstract |
Aspects of the invention provide a termination structure for a power MOSFET component. A termination trench is formed in the semiconductor material surrounding the active region of the MOSFET. The termination trench further includes first and second portions of electrically conductive material. The first and second portions of the electrically conductive material are electrically insulated from each other. It is emphasized that the summary of the invention must enable the researcher or other reader to quickly grasp the subject matter of the technical specification, and the summary of the invention meets the above requirements. It should be clear that this summary is not intended to be used to limit or limit the scope or intent of the application. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I576923-B |
| priorityDate |
2013-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |