| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2013-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc35ed8de2bcf32cbc9461144701ab72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caa44e16ee81b9ec580a8325ace6080b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_844eba9ddb0ab8e958bdcf0e5a580cfa |
| publicationDate |
2014-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201417212-A |
| titleOfInvention |
Semiconductor device manufacturing method |
| abstract |
The manufacturing method of the semiconductor device includes an insulating film forming step of forming an insulating film on a substrate on which the first conductive film is formed, and a recess forming step of forming a concave portion in the insulating film to expose the first conductive film to the concave portion a part of the metal oxide film forming step of forming a metal oxide film so as to cover the insulating film and the first conductive film after the recess forming step; and the hydrogen radical treatment step after the metal oxide film forming step The atomic hydrogen is irradiated onto the substrate; and the second conductive film forming step is performed to form a second conductive film inside the recess. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105575751-A |
| priorityDate |
2012-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |