| abstract |
A method of forming a dielectric layer is described. The method deposits a ruthenium containing film by chemical vapor deposition using a local plasma. The ruthenium containing film is fluid during deposition at low substrate temperatures. A ruthenium precursor (such as decylamine, higher decane or decane) is delivered to the substrate processing zone and is excited in the local plasma. A second plasma vapor or gas is combined with the ruthenium precursor in the substrate processing zone and may include ammonia, nitrogen (N2), argon, hydrogen (H2), and/or oxygen (O2). The device architecture disclosed herein in combination with these vapor/gas combinations has been found to produce fluid deposition at substrate temperatures below or about 200 °C when using relatively low power to excite local plasma. |