| abstract |
A method of manufacturing a semiconductor device according to the present invention includes: in a first step, forming a planar germanium layer on a germanium substrate, and forming a first columnar tantalum layer and a second columnar tantalum layer on the planar tantalum layer; Forming an oxide film hard mask on the first columnar layer and the second columnar layer, forming a second oxide film thicker than the gate insulating film on the planar germanium layer; and a third step; A gate insulating film is formed around the first columnar layer and the second columnar layer, and a metal film and a polysilicon film are formed around the gate insulating film, and the thickness of the polysilicon film is the first. The third resist is formed to form a gate electrode, and a third resist for forming a gate wiring is formed, and anisotropic etching is performed to form the gate wiring. |