| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45551
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513 |
| filingDate |
2013-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfd0948dce48f0cddd9b71bae10cb02a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_551d4bd20886662192fc28125b340d28 |
| publicationDate |
2014-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201405634-A |
| titleOfInvention |
Film forming method, film forming device and film forming system |
| abstract |
A film forming method according to an embodiment of the present invention includes the following steps: (a) a process of supplying a first precursor gas of a semiconductor material in a processing container in which a substrate to be processed is disposed, and adsorbing the first precursor gas The substrate to be processed; (b) the second precursor gas supplied to the dopant material in the processing vessel, the second precursor gas is adsorbed to the substrate to be processed; and (c) the reaction gas is generated in the processing vessel In the engineering of the slurry, a plasma treatment is carried out to modify the layer adsorbed to the substrate to be processed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I663280-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I665713-B |
| priorityDate |
2012-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |