| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2013-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59751372cb227f60426b980b438cbd0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11276cd7b630770ff1eab498eaf58569
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73318a510569d301679166a828cb6450 |
| publicationDate |
2013-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201349347-A |
| titleOfInvention |
Semiconductor device manufacturing method, substrate processing method, substrate processing device, and recording medium |
| abstract |
An object of the present invention is to form a high-quality film while suppressing the generation of foreign matter in a low temperature region. The present invention includes the steps of forming a film by repeating a cycle of supplying a raw material gas containing a predetermined element and a halogen element to a substrate in a processing container, and a substrate in the processing container. a step of supplying an amine gas to form a film containing at least a predetermined element and carbon on the substrate; and a reforming step of attaching the nitriding gas to the processing container after the film is formed, and attaching to the processing container The by-products are modified. |
| priorityDate |
2012-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |