http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201324627-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac5ed9c97100186e56186a2764f06e8c |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate | 2012-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2df315b0278049d291f996702949519 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_387871d590b052dacf785dd13fc2851f |
| publicationDate | 2013-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201324627-A |
| titleOfInvention | Semiconductor device manufacturing method and semiconductor device |
| abstract | The manufacturing method of the semiconductor device includes a step of forming a planar germanium layer (107) on the tantalum substrate (101) and the first and second columnar tantalum layers (104, 105), and forming a gate insulating film (109). Further, a metal film (110) and a polysilicon (111) are deposited and planarized, and etching is performed to expose the upper portions of the first and second columnar layer layers. Further, the first and second insulating film side walls (201, 200) are formed, and the first and second gate electrodes (117b, 117a) and the gate wiring (117c) are formed; and the first columnar layer is formed. a step of forming an n-type diffusion layer on the upper and lower portions and forming a p-type diffusion layer on the upper and lower portions of the second columnar layer; and the first and second insulating film side walls and the first and second gate electrodes and the gate The side wall of the wiring forms a third insulating film side wall (202); and the step of forming a telluride (133). |
| priorityDate | 2011-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.