http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201312652-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2012-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e37386558f6016f100c0f9502a55f58f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_438b4a1faf22ae05de2e492912950822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_845eac9d7d2f03ad8634abada0ada641 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f7959da77e6e658566b7092ef574ec3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94879ef4d212a86d39c2a2c1e747f063 |
| publicationDate | 2013-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201312652-A |
| titleOfInvention | Dry etching for films containing niobium and nitrogen |
| abstract | A method of etching an exposed germanium-containing and nitrogen-containing material on a patterned heterostructure is described, and the method includes remote plasma etching formed from a fluorine-containing precursor and an oxygen-containing precursor. The plasma effluent from the remote plasma flows into the substrate processing zone where the plasma effluent reacts with the exposed regions of the ruthenium and nitrogen containing material. The plasma effluent reacts with the patterned heterostructure to selectively remove the ruthenium and nitrogen containing material from the exposed ruthenium and nitrogen containing material regions while very slowly removing other exposed materials. The selective selectivity of the ruthenium and nitrogen containing material results from the presence of ion suppression elements between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the amount of ionically charged species that reach the substrate. This method can be used to selectively remove the ruthenium and nitrogen containing material at a rate that is more than twenty times faster than the cerium oxide removal rate. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381235-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I648785-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I784967-B |
| priorityDate | 2011-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 86.