| abstract |
The present invention provides a semiconductor device which has good conductivity. A semiconductor device (10) of the present invention includes: a base material (2); a semiconductor element (3); and a bonding layer (1) which is disposed between the base material (2) and the semiconductor element (3) and bonds the base material (2) and the semiconductor element (3) together. The bonding layer (1) has metal particles and insulating particles which are dispersed therein, and the metal particles have a scale shape or an oval shape. In addition, when the volume content of the metal particles in the bonding layer (1) is represented as ''a'' and the volume content of the insulating particles in the bonding layer (1) is represented as ''b'', the semiconductor device (10) has a specification such that the volume content of the filler in the bonding layer (1) (a+b) is equal to or more than 0.20 and equal to and less than 0.50, and the volume content of the metal particles in the filler (a/(a+b)) is equal to or more than 0.03 and equal to or less than 0.70. |