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filingDate 2012-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78fb4b0be2b5cbbaed552265ddc39a93
publicationDate 2012-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201247925-A
titleOfInvention Atomic layer deposition using radicals of gas mixture
abstract Performing atomic layer deposition (ALD) using radicals of a mixture of nitrogen compounds to increase the deposition rate of a layer deposited on a substrate. A mixture of nitrogen compound gases is injected into a radical reactor. Plasma of the compound gas is generated by applying voltage across two electrodes in the radical reactor to generate radicals of the nitrogen compound gases. The radicals are injected onto the surface of a substrate previously injected with source precursor. The radicals function as a reactant precursor and deposit a layer of material on the substrate.
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priorityDate 2011-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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