http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201246364-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f7f120efe096284c7389702c969cf3d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2012-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f3d1fbabb9c19b70635f94e8ae537b6 |
| publicationDate | 2012-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201246364-A |
| titleOfInvention | Etching gas and etching method |
| abstract | The present invention provides a plasma etching gas and a plasma etching method. The plasma etching gas comprises carbon number 3 or 4 fluorocarbon not only having at least one or more unsaturated bonds and/or ether bonds but also having bromine atom. The plasma etching method is carried out by using the plasma etching gas and plasma etching the silicon oxide film on the substrate through a mask. The plasma etching gas of the present invention not only has excellent etching selectivity but also has shorter atmospheric lifetime and less environmental loading. The plasma etching method of the present invention can plasma etch silicon oxide film at high etching speed selectivity without rising roughness of surface. |
| priorityDate | 2011-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 78.