| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2012-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c56907a3c03bf12ec76f6660a88aaa54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73522e142b8ae3924888ccebacd20e41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e82f51bdeb869d14749535155ec4df2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38a6fe242528d23b8907872beafff79b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d2f0947ab0b9c0c283824fd531cf3d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b76157bb9c8ec348cb3acf2f2e0d2c7b |
| publicationDate |
2012-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201246359-A |
| titleOfInvention |
Dry chemical cleaning for gate stack preparation |
| abstract |
A deposition process including a dry etch process, followed by a deposition process of a high-k dielectric is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is energized to form a plasma of reactive gas which reacts with an oxide on the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose a substrate surface. The substrate surface is substantially free of oxides. Deposition is then used to form a layer on the substrate surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I687541-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11264255-B2 |
| priorityDate |
2011-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |